Manufacturing method of semiconductor package

ABSTRACT

The present disclosure provides a method for manufacturing a semiconductor package. The method includes providing a carrier, forming a semiconductor die layer over the carrier, and exposing the conductive contact from a close end of the insulating layer by an etching operation. Forming the semiconductor die layer includes forming an insulating layer over the carrier, forming a trench having a close end and an open end in the insulating layer, forming a conductive contact in the trench, and placing a semiconductor die over the insulating layer.

PRIORITY CLAIM AND CROSS REFERENCE

This application is a divisional application to U.S. non-provisionalapplication Ser. No. 15/239,295, filed Aug. 17, 2016, which is a regularapplication to U.S. provisional application No. 62/353,826, filed Jun.23, 2016, and claims priority thereto.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as personal computers, cell phones, digital cameras, and otherelectronic equipment. The fabrication of semiconductor devices involvessequentially depositing insulating or dielectric layers, conductivelayers, and semiconductor layers over a semiconductor substrate, andpatterning the various material layers using lithography and etchingprocesses to form circuit components and elements on the semiconductorsubstrate.

The semiconductor industry continues to improve the integration densityof various electronic components (e.g., transistors, diodes, resistors,capacitors, etc.) by continual reductions in minimum feature size, whichallows more components to be integrated into a given area. The number ofinput and output (I/O) connections is significantly increased. Smallerpackage structures, that utilize less area or smaller heights, aredeveloped to package the semiconductor devices. For example, in anattempt to further increase circuit density, three-dimensional (3D) ICshave been investigated.

New packaging technologies have been developed to improve the densityand functionality of semiconductor devices. These relatively new typesof packaging technologies for semiconductor devices face manufacturingchallenges.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a cross sectional view of a semiconductor package, inaccordance with some embodiments of the present disclosure;

FIG. 2 shows a portional enlarged cross sectional view of asemiconductor package, in accordance with some embodiments of thepresent disclosure;

FIG. 3 shows a portional enlarged cross sectional view of asemiconductor package, in accordance with some embodiments of thepresent disclosure;

FIG. 4 shows a portional enlarged cross sectional view of asemiconductor package, in accordance with some embodiments of thepresent disclosure;

FIG. 5 shows a cross sectional view of a semiconductor package, inaccordance with some embodiments of the present disclosure;

FIG. 6 shows a cross sectional view of a semiconductor package, inaccordance with some embodiments of the present disclosure;

FIG. 7A to FIG. 7H show cross sectional views of a sequence of a methodfor manufacturing a semiconductor package, in accordance with someembodiments of the present disclosure; and

FIG. 8A to FIG. 8H show cross sectional views of a sequence of a methodfor manufacturing a semiconductor package, in accordance with someembodiments of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Notwithstanding that the numerical ranges and parameters setting forththe broad scope of the disclosure are approximations, the numericalvalues set forth in the specific examples are reported as precisely aspossible. Any numerical value, however, inherently contains certainerrors necessarily resulting from the standard deviation found in therespective testing measurements. Also, as used herein, the term “about”generally means within 10%, 5%, 1%, or 0.5% of a given value or range.Alternatively, the term “about” means within an acceptable standarderror of the mean when considered by one of ordinary skill in the art.Other than in the operating/working examples, or unless otherwiseexpressly specified, all of the numerical ranges, amounts, values andpercentages such as those for quantities of materials, durations oftimes, temperatures, operating conditions, ratios of amounts, and thelikes thereof disclosed herein should be understood as modified in allinstances by the term “about.” Accordingly, unless indicated to thecontrary, the numerical parameters set forth in the present disclosureand attached claims are approximations that can vary as desired. At thevery least, each numerical parameter should at least be construed inlight of the number of reported significant digits and by applyingordinary rounding techniques. Ranges can be expressed herein as from oneendpoint to another endpoint or between two endpoints. All rangesdisclosed herein are inclusive of the endpoints, unless specifiedotherwise.

Various embodiments include methods and corresponding structures forforming a semiconductor device package. Various embodiments integratemultiple functional chips in a single device package and implementsChip-to-Wafer (e.g., known good die) for Chip-on-Wafer (CoW) levelpackaging. Functional chips may be directly bonded to other functionalchips using bonding layers (e.g., by fusion bonding and/or hybridbonding) in order to reduce the need to form solder bumps (e.g.,microbumps) and underfill. Various embodiments may furtheradvantageously provide a system-in-package (SiP) solution with smallerform factor, increased input/output density, and low via aspect ratio.Thus, manufacturing errors and costs can be reduced.

This application relates to a semiconductor package and itsmanufacturing method, and more particularly to a semiconductor packagehaving constant manufacturing cost with increasing conductive padcounts, e.g., I/O counts, per chip and a manufacturing method thereof.

The trend of higher I/O counts per chip is in urgent need. Conventionallaser drill operation to open I/O contact from a polymer layer issuffered from low critical dimension uniformity and high overlay shift,rendering delamination between the polymer layer and molding compoundsurrounding the I/O bump. A greater area enclosure of the I/O contactshall be preserved as a penalty for the laser drill operation, and hencethe pitch of the I/O bump cannot be shrinked. Normally a 20 micrometerthick circumferencial region is preserved for the laser drilling overlayproblem.

The general purpose of the present disclosure provides one or more ofthe following advantages: (1) forming smaller pitch I/O bump at constantcost; (2) capable for manufacturing both small and large pitch I/O bump;(3) requiring smaller area enclosure, e.g., smaller than a 7 micrometerthick circumferencial region, because of good critical dimensionuniformity and smaller overlay shift; (4) decreasing critical dimensionof the I/O bump; (5) providing better solder-I/O bump joint strength;(6) providing lower backside packaging joint standoff height.

The present disclosure provides a semiconductor package with a shallowtrench in the polymer layer prior to the formation of an I/O bump. Theshallow trench may possess a tapered sidewall. A seed layer is betweenthe tapered sidewall of a shallow trench and the I/O bump.

The present disclosure also provides a manufacturing method of asemiconductor package. The method comprises forming a shallow trench ina polymer layer by a lithography operation, forming an I/O bump in theshallow trench, and etching the polymer layer to expose the I/O bump.

Referring to FIG. 1, FIG. 1 is a cross sectional view of a semiconductorpackage 10, in accordance with some embodiments of the presentdisclosure. Semiconductor package 10 includes a first semiconductor dielayer 101 and a second semiconductor die layer 102. Second semiconductordie layer 102 further includes a packaged die 1021. Packaged die 1021has a, for example, stacked die encapsulated by molding compound anddisposed over a carrier. The stacked die includes multiple diesvertically stacked and wire-bonded to the conductive traces on thecarrier. Wire bonding can be used to make the electrical connectionsfrom chip components such as chip resistors or chip capacitors tosubstrate. Two function chips are stacked on top of a plurality ofsubstrate layers. The chips are connected to the substrate by aplurality of bonding gold wires. Other form of wires such as aluminumwire can be used, too. The function chips, the gold wire, and thesubstrate form a wire bonding (WB) package. In some embodiments, thepackaged die 1021 is a memory die, e.g., a DRAM or a NAND flash. Themolding compound can be an epoxy, polyimide, silicone rubber, the like,or a combination thereof. The molding compound can be applied usingacceptable techniques, such as compression molding. As shown in FIG. 1,the first semiconductor die layer 101 includes an active surface 101Aand a passive surface 101B or a back surface. The passive surface 101Bis encapsulated by molding compound and an insulating layer 1012 isdisposed over the passive surface 101B. In some embodiments, as notshown in FIG. 1, the insulating layer 1012 is in direct contact with thepassive surface 101B.

First semiconductor die layer 101 broadly includes a plurality of dies121, 123, and electrical connection extending from the active surface101A of the dies 121, 123. In some embodiments, dies 121, 123 aresilicon-on-chip (SOC) die flip-chip bonded to redistribution layer (RDL)1011. For example, the electrical connection connects the active surface101A of die 121 to the RDL 1011, and further to a solder bump 103through a conductive contact 1013. In some embodiments, the solder bump103 is a controlled collapse chip connection (C4) bump. Active surface101A includes interconnect structure extending from the body of the dies121, 123. Interconnect structure may include inter-layer dielectric(ILD) and/or inter-metal dielectric (IMD) layers containing conductivefeatures (e.g., conductive lines and vias comprising copper, aluminum,tungsten, combinations thereof, and the like) formed using any suitablemethod. The ILD and IMD layers may include low-k dielectric materialshaving k values, for example, lower than about 4.0 or even 2.0 disposedbetween such conductive features. In some embodiments, the ILD and IMDlayers may be made of, for example, phosphosilicate glass (PSG),borophosphosilicate glass (BPSG), fluorosilicate glass (FSG),SiO_(x)C_(y), Spin-On-Glass, Spin-On-Polymers, silicon carbon material,compounds thereof, composites thereof, combinations thereof, or thelike, formed by any suitable method, such as spinning, chemical vapordeposition (CVD), and plasma-enhanced CVD (PECVD). Interconnectstructure electrically connects various active devices to formfunctional circuits within dies 121, 123, The functions provided by suchcircuits may include logic structures, memory structures, processingstructures, sensors, amplifiers, power distribution, input/outputcircuitry, or the like. One of ordinary skill in the art will appreciatethat the above examples are provided for illustrative purposes only tofurther explain applications of various embodiments and arenon-limiting. Other circuitry may be used as appropriate for a givenapplication.

As shown in FIG. 1, the conductive contact 1013 is a through insulatorvia (TIV) penetrating through the molding compound encapsulating dies121, 123 and the insulating layer 1012. Alternatively stated, a portionof the sidewall of the TIV is surrounded by the insulating layer 1012.In some embodiments, a seed layer 105 can be observed between theportion of the sidewall of the TIV and the insulating layer 1012.Details of the joint A between the TIV and the solder bump 103 areillustrated in FIG. 2 to FIG. 4 of the present disclosure.

In some embodiments, the dies 121, 123 can be known good dies (KGD)determined by a testing or probing operation. The KGD is attached usinga pick-and-place tool. A basic flip-chip (FC) packaging technologycomprises an IC, an interconnect system, and a substrate. A functionchip is connected to the substrate with a plurality of solder bumps,wherein the solder bumps forming a metallurgical interconnection betweenthe chip and the substrate. The function chip, the solder bump, and thesubstrate form a flip-chip package.

As shown in FIG. 1, semiconductor package 10 further includes a ballgrid array (BGA) 107 electrically coupled to the first semiconductor dielayer 101 and the second semiconductor die layer 102 through the RDL1011 and conductive contact 1013, respectively. BGA packaging technologygenerally is an advanced semiconductor packaging technology, which ischaracterized in that a semiconductor chip is mounted on a front surfaceof a substrate, and a plurality of conductive elements such as solderballs are arranged in a matrix array, customarily referred to as ballgrid array, on a back surface of the substrate. The BGA allows thesemiconductor package to be bonded and electrically connected to anexternal PCB or other electronic devices. As shown in FIG. 1, the BGA107 is closer to the active surface 101A than the passive surface 101Bof the first semiconductor die layer 101.

Referring to FIG. 2, FIG. 2 is a portional enlarged cross sectional viewA1 of the semiconductor package 10, in accordance with some embodimentsof the present disclosure. Identical numeral annotations representidentical or similar elements and would not be repeated herein forbrevity. The conductive contact 1013 includes a body 1013B and a mesa1013A. The mesa 1013A has a tapered sidewall 1013′ connected with a topsurface 1013″. As shown in FIG. 2, the top surface 1013″ of the mesa1013A is coplanar with the top surface of the insulating layer 1012.Alternatively stated, sidewall 1013′ of the mesa 1013A is completelysurrounded by the insulating layer 1012 and the seed layer 105, and onlythe top surface 1013″ of the mesa 1013A is in contact with the solderbump 103. Note the surface area SA1 (shown in dotted lines) of the mesa1013A connected to the solder bump 103 is smaller than those shown inFIG. 3 and FIG. 4, hence, the solder bump 103 may possess a higherstandoff in the final semiconductor package 10 compared to those shownin FIG. 3 and FIG. 4.

FIG. 3 shows a portional enlarged cross sectional view A2 of asemiconductor package 10, in accordance with some embodiments of thepresent disclosure. The conductive contact 1013 includes a body 1013Band a mesa 1013A. The mesa 1013A has a tapered sidewall 1013′ connectedwith a top surface 1013″. As shown in FIG. 3, the top surface 1013″ ofthe mesa 1013A is higher than the top surface of the insulating layer1012. In FIG. 3, the mesa 1013A protrudes from the insulating layer 1012by a distance D1. In some embodiments, D1 can be in a range of fromabout 1 μm to about 7 μm. Alternatively stated, sidewall 1013′ of themesa 1013A is partially surrounded by the insulating layer 1012 andpartially surrounded by the seed layer 105, and only the top surface1013″ and a portion of the sidewall 1013′ are in contact with the solderbump 103. Note the surface area SA2 (shown in dotted lines) of the mesa1013A connected to the solder bump 103 is smaller than that shown inFIG. 4 but greater than that shown in FIG. 2, hence, the solder bump 103may possess a higher standoff in the final semiconductor package 10compared to that shown in FIG. 4 and a lower standoff in the finalsemiconductor package 10 compared to that shown in FIG. 2. The greaterthe surface area of the mesa, the greater the bonding strength betweenthe solder bump 103 and the mesa 1013A.

FIG. 4 shows a portional enlarged cross sectional view A3 of asemiconductor package 10, in accordance with some embodiments of thepresent disclosure. The conductive contact 1013 includes a body 1013Band a mesa 1013A. The mesa 1013A has a tapered sidewall 1013′ connectedwith a top surface 1013″. As shown in FIG. 4, the top surface 1013″ ofthe mesa 1013A is higher than the top surface of the molding compound.In FIG. 4, the mesa 1013A protrudes from the molding compound by adistance D2. In some embodiments, D2 can be in a range of from about 5μm to about 10 μm. Alternatively stated, sidewall 1013′ of the mesa1013A is neither surrounded by the insulating layer 1012 nor the seedlayer 105 shown in previous figures. The top surface 1013″ and thesidewall 1013′ are in contact with the solder bump 103. Note the surfacearea SA3 (shown in dotted lines) of the mesa 1013A connected to thesolder bump 103 is greater than those shown in FIG. 2 and FIG. 3, hence,the solder bump 103 may possess a lower standoff in the finalsemiconductor package 10 compared to that shown in FIG. 2 and FIG. 3.

FIG. 5 shows a cross sectional view of a semiconductor package 20, inaccordance with some embodiments of the present disclosure. Thesemiconductor package 20 includes a first semiconductor die layer 201having an active surface 201A and a passive surface 201B. The activesurface 201A of the first semiconductor die layer 201 connects to aconductive contact 2011, e.g., an RDL. The conductive contact 2011 isfurther connected to a solder bump 203. In some embodiments, the solderbump 203 is a C4 bump. The solder bump 203 is closer to the activesurface 201A than the passive 201B or back surface of the firstsemiconductor die layer 201.

In some embodiments, the RDL includes several layers, for example, afirst via 2011A/a first line 2011B, a second via 2012A/a second line2012B, and a third via 2013A. However, more or less layer of an RDLfitting to a particular design is encompassed in the scope of thepresent disclosure. The RDL is enclosed by an insulating layer 2012.Note the insulating layer 2012 may be formed at different manufacturingoperations, as known by people having ordinary skill in the art. In FIG.5, the first via 2011A has a bottom surface 2011″ and a sidewall 2011′.The bottom surface 2011″ is exposed from the insulating layer 2012. Aseed layer 205 can be observed between the insulating layer 2012 and thesidewall 2011′ of the first via 2011A. Apart from the first via 2011Aand the insulating layer 2012, seed layer 205 also extends between firstline 2011B and the insulating layer 2012.

Note the surface area SA4 of the first via 2011A connected to the solderbump 203 is smaller than the surface area SA5 shown in FIG. 6, hence,the solder bump 203 may possess a higher standoff in the finalsemiconductor package 20 compared to those in the final semiconductorpackage 30 of FIG. 6.

FIG. 6 shows a cross sectional view of a semiconductor package 30, inaccordance with some embodiments of the present disclosure. Thesemiconductor package 30 includes a first semiconductor die layer 301having an active surface 301A and a passive surface 301B. The activesurface 301A of the first semiconductor die layer 301 connects to aconductive contact 3011, e.g., an RDL. The conductive contact 3011 isfurther connected to a solder bump 303. In some embodiments, the solderbump 303 is a C4 bump. The solder bump 303 is closer to the activesurface 301A than the passive 301B or back surface of the firstsemiconductor die layer 301.

In some embodiments, the RDL includes several layers, for example, afirst via 3011A/a first line 3011B, a second via 3012A/a second line3012B, and a third via 3013A. However, more or less layer of an RDLfitting to a particular design is encompassed in the scope of thepresent disclosure. The RDL is enclosed by an insulating layer 3012. InFIG. 6, the first via 4011A has a bottom surface 3011″ and a sidewall3011′. The bottom surface 3011″ is exposed from the insulating layer3012 and the sidewall 3011′ is partially exposed from the insulatinglayer 3012. A seed layer 305 can be observed between the insulatinglayer 3012 and a portion of the sidewall 3011′ of the first via 3011A.Apart from the first via 3011A and the insulating layer 3012, seed layer305 also extends between first line 3011B and the insulating layer 3012.

Note the surface area SA5 of the first via 3011A connected to the solderbump 303 is greater than the surface area SA4 shown in FIG. 5, hence,the solder bump 303 may possess a lower standoff in the finalsemiconductor package 30 compared to those in the final semiconductorpackage 20 of FIG. 5.

FIG. 7A to FIG. 7H show cross sectional views of a sequence of a methodfor manufacturing a semiconductor package 10, in accordance with someembodiments of the present disclosure. Identical numeral annotationsrepresent identical or similar elements and would not be repeated hereinfor brevity. In FIG. 7A, a carrier 701 is provided with a gluing layer703. An insulating layer 1012 or a dielectric layer is subsequentlyformed over the gluing layer 703. The insulating layer 1012 may be madeof, for example, phosphosilicate glass (PSG), borophosphosilicate glass(BPSG), fluorosilicate glass (FSG), SiO_(x)C_(y), Spin-On-Glass,Spin-On-Polymers, silicon carbon material, compounds thereof, compositesthereof, combinations thereof, or the like, formed by any suitablemethod, such as spinning, chemical vapor deposition (CVD), andplasma-enhanced CVD (PECVD).

A photoresist 705 is deposited and patterned over the insulating layer1012 such as by acceptable photolithography techniques. An etchoperation is carried out to form a trench 707 with an open end 707 a anda closed end 707 b pattern in the insulating layer 1012. In someembodiments, the trench 707 is a recess occupying a portion of thethickness of the insulating layer 1012 and not penetrating through theinsulating layer 1012. In some embodiments, the remaining thickness T1of the insulating layer 1012 under the trench 707 is about 2 micrometer.Alternatively stated, a difference between thickness T1 and thethickness of the original insulating layer 1012 is the height of themesa 1013A shown in FIG. 2 to FIG. 4. The thickness T1 is determined tobe about 2 micrometer because longer back-side etching time is requiredif thicker than T1 and damages may be caused to the gluing layer duringtrench 707 formation if thinner than T1.

In FIG. 7B, a conductive contact 1013 is formed in the trench 707 withthe closed end 707 b by, for example, an electroplating operation. Aseed layer is deposited in the openings of patterned photoresist. Theseed layer (not shown) deposited over the insulating layer 1012 and thetrench 707 can be copper, titanium, the like, or a combination thereof,and can be deposited by sputtering, another PVD process, the like, or acombination thereof. A conductive material, such as copper, aluminum,the like, or a combination thereof, is deposited in the trench 707 byelectroless plating, electroplating, or the like. The photoresist 705 isremoved, such as by an ash and/or flush process.

In FIG. 7C, dies 121, 123 of the first semiconductor die layer 101 isplace over the insulating layer 1012. In some embodiments, dies 121, 123can be known good dies (KGD) determined by a testing or probingoperation. The KGD is attached using a pick-and-place tool. In someembodiments, the passive surface 101B or the back surface of the dies121, 123 are in contact with the insulating layer 1012. The activesurface 101A is facing the direction opposite to the carrier 701. InFIG. 7D, a molding compound 702 is applied over the conductive contacts1013 and the dies 121, 123. A planarization operation is followed to atleast expose the active surface 101A of the dies 121, 123 and the endportion of the conductive contact 1013 in order to expose themetallization portion for subsequent operations.

In FIG. 7E, an RDL 1011 is formed over the planarized surface of themolding compound 702 and being electrically connected to the dies 121,123 and conductive contacts 1013. In FIG. 7F, the RDL 1011 is furtherprocessed to form electrical connection with a BGA 107. In someembodiments, an integrated passive device (IPD) is also placed at thesame level of the BGA 107 and coupled with the RDL 1011. In FIG. G, thecarrier 701 is debonded from the first semiconductor die layer 101,specifically, the carrier 701 is separated from the insulating layer bythe property change of the gluing layer 703. The de-bonding may compriseexposing the gluing layer 703 to UV lights, such as a laser, or byexposing the adhesive to a solvent. The carrier 701 may comprise, forexample, glass, silicon oxide, aluminum oxide, a combination thereof.The gluing layer 703 may be any suitable adhesive, such as UV glue,which loses its adhesive property when exposed to UV lights.

After the separation of the carrier 701 and the gluing layer 703, theinsulating layer 1012 is exposed as a result. Referring back to FIG. 7A,due to the fact that a thickness T1 of the insulating layer 1012 ispreserved when forming the closed-end trench 707, the conductive contact1013 is not exposed immediately after the debonding operation discussedabove. A subsequent and separate etching operation is carried out toconsume at least the thickness T1 of the insulating layer 1012 in orderto expose at least the top surface of the 1013″ of the mesa 1013A, asshown from FIG. 2 to FIG. 4. The etching operation can be any dry etchoperation that is suitable in controlling the extent of etching depth.For example, a plasma etch can be applied to the insulating layer 1012with a first plasma energy for etching to expose the top surface 1013″of the mesa 1013A and obtain a structure as depicted in FIG. 2. In otherembodiment, a second plasma energy can be applied to expose both the topsurface 1013″ and a portion of the sidewall 1013′ of the mesa 1013A inorder to obtain a structure as depicted in FIG. 3. For anotherembodiment, a third plasma energy can be adopted to expose both the topsurface 1013″ and the complete sidewall 1013′ of the mesa 1013A in orderto obtain a structure as depicted in FIG. 4. In some embodiments, thedry etching not only removes materials of the insulating layer 1012 butalso a portion of the seed layer (not shown) deposited prior to theformation of the conductive contact 1013. Using dry etch to expose theconductive contact instead of using laser drilling can render smallercritical dimension of the conductive contact, a better overlay control,a high manufacturing through-put, and the counts of the conductivecontact being irrelevant to the fabrication cost. Dry etching leveragesa sophisticated etching technology in one manufacturing operationinstead of a series of drilling operations.

In FIG. 7H, second semiconductor die layer 102 is pre-formed to have asolder bump 103 connected thereto, and the second semiconductor dielayer 102 is coupled to the exposed conductive contact 1013 through thesolder bump 103. Details of the interface between the conductive contact1013 and the solder bump 103 can be referred to FIG. 2, FIG. 3, and FIG.4 of the present disclosure.

Referring to FIG. 8A to FIG. 8H, FIG. 8A to FIG. 8H show cross sectionalviews of a sequence of a method for manufacturing a semiconductorpackage 30, in accordance with some embodiments of the presentdisclosure. In FIG. 8A, a carrier 801 is provided with a gluing layer803. In FIG. 8B, an insulating layer 3012 or a first interlayerdielectric (ILD) is subsequently formed over the gluing layer 803. Theinsulating layer 3012 may be made of, for example, phosphosilicate glass(PSG), borophosphosilicate glass (BPSG), fluorosilicate glass (FSG),SiO_(x)C_(y), Spin-On-Glass, Spin-On-Polymers, silicon carbon material,compounds thereof, composites thereof, combinations thereof, or thelike, formed by any suitable method, such as spinning, chemical vapordeposition (CVD), and plasma-enhanced CVD (PECVD). Also shown in FIG.8B, a photolithography operation is carried out to form a trench 805with a closed end. In some embodiments, the remaining thickness T1 ofthe insulating layer 3012 under the trench 805 is about 2 micrometer.

In FIG. 8C, a seed layer 305 is deposited over the insulating layer 3012and a patterned photoresist 807 is further formed over the seed layer305. The seed layer, such as a copper, titanium, or the like, isdeposited on the insulating layer 3012, such as by sputtering or anotherphysical vapor deposition (PVD) process. In FIG. 8D, a first RDL isformed by an electroplating operation, and the patterned photoresist 807is removed. The first RDL includes a first via 3011A complying thetrench of the insulating layer 3012 and a first line 3011B at the topsurface of the insulating layer 3012. Note the removal of the patternedphotoresist 807 may also remove the underlying seed layer 305.

In FIG. 8E, another insulating layer 3012 is formed over the first RDL.A second ILD is deposited over the first RDL. The second ILD may be apolyimide, polybenzoxazole (PBO), benzocyclobutene (BCB), the like, or acombination thereof. The second ILD can be deposited by a coatingprocess, a lamination process, the like, or a combination thereof.Openings may be formed through the second ILD layer to the first RDLlayer using acceptable photolithography techniques. Subsequent secondRDL may be formed using the same or similar processes as discussed withregard to the first RDL. The second RDL includes a second via 3012Acomplying an opening of the second ILD and a second line 3012B at thetop surface of the second ILD. Subsequently, another insulating layer3012 is formed over the second RDL, particularly, a third ILD isdeposited over the second RDL and a third via 3013A is formed in anopening of the third ILD. The number of the RDL can be determinedaccording to different designs and is not a limiting demonstrationherein.

A first semiconductor die layer 301 is formed over the RDL further awayfrom the carrier 801 and electrically coupled to said RDL through asolder bump 307. An active surface 301A of the first semiconductor dielayer 301 is facing layer of the RDL away from the carrier 801. In FIG.8F, the carrier 801 is debonded from the RDL, specifically the carrier801 is separated from the insulating layer 3012 by the property changeof the gluing layer 803. The de-bonding may comprise exposing the gluinglayer 803 to UV lights, such as a laser, or by exposing the adhesive toa solvent. The carrier 801 may comprise, for example, glass, siliconoxide, aluminum oxide, a combination thereof. The gluing layer 803 maybe any suitable adhesive, such as UV glue, which loses its adhesiveproperty when exposed to UV lights.

After the separation of the carrier 801 and the gluing layer 803, theinsulating layer 3012 is exposed as a result. Referring back to FIG. 8B,due to the fact that a thickness T1 of the insulating layer 3012 ispreserved when forming the closed-end trench 805, the conductive contactor the first via 3011A of the first RDL is not exposed immediately afterthe debonding operation discussed above. A subsequent and separateetching operation is carried out to consume at least the thickness T1 ofthe insulating layer 3012 in order to expose at least the top surface ofthe 1013″ of the mesa 1013A, as shown from FIG. 2 to FIG. 4. The etchingoperation can be any dry etch operation that is suitable in controllingthe extent of etching depth. For example, a plasma etch can be appliedto the insulating layer 3012 with a first plasma energy for etching toexpose the top surface 1013″ of the mesa 1013A and obtain a structure asdepicted in FIG. 2. In other embodiment, a second plasma energy can beapplied to expose both the top surface 1013″ and a portion of thesidewall 1013′ of the mesa 1013A in order to obtain a structure asdepicted in FIG. 3. For another embodiment, a third plasma energy can beadopted to expose both the top surface 1013″ and the complete sidewall1013′ of the mesa 1013A in order to obtain a structure as depicted inFIG. 4. In some embodiments, the dry etching not only removes materialsof the insulating layer 3012 but also a portion of the seed layer (notshown) deposited prior to the formation of the conductive contact or thefirst via 3011A. Using dry etch to expose the conductive contact insteadof using laser drilling can render smaller critical dimension of theconductive contact, a better overlay control, a high manufacturingthrough-put, and the counts of the conductive contact being irrelevantto the fabrication cost. Dry etching leverages a sophisticated etchingtechnology in one manufacturing operation instead of a series ofdrilling operations.

For example, as shown in FIG. 8G, a top surface and a portion of thesidewall of the conductive contact or the first via 3011A protrude fromthe insulating layer 3012 as a result of the dry etch operation. Asurface area SA5 of the first via 3011A is previously discussed in FIG.3 and can be referred thereto. In FIG. 8H, a solder bump 303 is furthermounted to the exposed surface of the first via 3011A. The solder bump303 is in contact with the surface area SA5 of the first via 3011A.

Some embodiments of the present disclosure provide a semiconductorpackage. The semiconductor package includes a first semiconductor dielayer having an active surface, a conductive contact electricallycoupled to the active surface, a sidewall of the conductive contactbeing surrounded by an insulating layer; and a solder bump connected tothe conductive contact. A seed layer is between the sidewall of theconductive contact and the insulating layer.

Some embodiments of the present disclosure provide a method formanufacturing a semiconductor package. The method includes providing acarrier, forming an insulating layer over the carrier, forming a firstsemiconductor die layer over the insulating layer, debonding the carrierfrom the insulating layer, and exposing the conductive contact from theinsulating layer by an etching operation. The forming a firstsemiconductor die layer over the insulating layer further includesforming a shallow trench in the insulating layer, forming a conductivecontact in the shallow trench, and placing first semiconductor die overthe insulating layer.

Some embodiments of the present disclosure provide a method formanufacturing a semiconductor package. The method includes providing acarrier, forming a first semiconductor die layer over the carrier,debonding the carrier from the first polymer layer, and exposing theconductive contact from the first polymer layer by an etching operation.The forming a first semiconductor die layer over the carrier includesforming a first polymer layer over the carrier, forming a shallow trenchin the first polymer layer, forming a conductive contact in the shallowtrench, and placing first semiconductor die over the first polymerlayer.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother operations and structures for carrying out the same purposesand/or achieving the same advantages of the embodiments introducedherein. Those skilled in the art should also realize that suchequivalent constructions do not depart from the spirit and scope of thepresent disclosure, and that they may make various changes,substitutions, and alterations herein without departing from the spiritand scope of the present disclosure.

Moreover, the scope of the present application is not intended to belimited to the particular embodiments of the process, machine,manufacture, composition of matter, means, methods and steps describedin the specification. As one of ordinary skill in the art will readilyappreciate from the disclosure of the present invention, processes,machines, manufacture, compositions of matter, means, methods, or steps,presently existing or later to be developed, that perform substantiallythe same function or achieve substantially the same result as thecorresponding embodiments described herein may be utilized according tothe present invention. Accordingly, the appended claims are intended toinclude within their scope such processes, machines, manufacture,compositions of matter, means, methods, or steps.

What is claimed is:
 1. A method for manufacturing a semiconductorpackage, comprising: providing a carrier; forming an insulating layerover the carrier; forming a first semiconductor die layer over theinsulating layer, comprising: forming a shallow trench in the insulatinglayer; forming a conductive contact in the shallow trench; and placingthe first semiconductor die over the insulating layer; and exposing theconductive contact from the insulating layer by evenly thinning down theinsulating layer in an etching operation.
 2. The method of claim 1,further comprising debonding the carrier from the insulating layer priorto exposing the conductive contact.
 3. The method of claim 1, whereinthe forming the shallow trench in the insulating layer comprisespatterning a photomask over the insulating layer and forming the shallowtrench with a closed end in the insulating layer.
 4. The method of claim1, wherein the forming the conductive contact in the shallow trenchfurther comprises forming a seed layer in the closed end of the shallowtrench.
 5. The method of claim 1, subsequent to forming a shallow trenchin the insulating layer, a thinnest portion of the insulating layer isabout 2 micrometer.
 6. The method of claim 4, wherein the etchingoperation comprises removing a portion of the seed layer.
 7. The methodof claim 1, wherein placing the first semiconductor die comprisesplacing known good die over the insulating layer.
 8. A method formanufacturing a semiconductor package, comprising: providing a carrier;forming a first semiconductor die layer over the carrier, comprising:forming a first polymer layer over the carrier; forming a shallow trenchin the first polymer layer; forming a conductive contact in the shallowtrench; and placing the first semiconductor die over the first polymerlayer; and exposing the conductive contact from the first polymer layerby evenly thinning down the first polymer layer in an etching operation.9. The method of claim 8, further comprising debonding the carrier fromthe first polymer layer prior to exposing the conductive contact. 10.The method of claim 8, wherein the first polymer layer and theconductive contact are a portion of a first redistribution layer (RDL).11. The method of claim 8, wherein the forming the conductive contact inthe shallow trench further comprises forming a seed layer in the shallowtrench.
 12. The method of claim 8, wherein forming the conductivecontact in the shallow trench is performed concurrently with forming aRDL over the first polymer layer.
 13. The method of claim 8, furthercomprising forming a second RDL over the first RDL.
 14. The method ofclaim 8, wherein the etching operation comprises a dry etch operation.15. A method for manufacturing a semiconductor package, comprising:providing a carrier; forming a semiconductor die layer over the carrier,comprising: forming an insulating layer over the carrier; forming atrench having a closed end and an open end in the insulating layer;forming a conductive contact in the trench; and placing a semiconductordie over the insulating layer; and exposing the conductive contact fromthe closed end of the trench in the insulating layer by evenly thinningdown the insulating layer in an etching operation.
 16. The method ofclaim 15, wherein forming the trench having the closed end and the openend in the insulating layer comprises patterning a photomask layer overthe insulating layer and removing a portion of the insulating layer. 17.The method of claim 16, wherein removing the portion of the insulatinglayer is free from exposing the carrier.
 18. The method of claim 15,wherein forming the conductive contact in the trench comprises forming aconductive contact protruding from the insulating layer.
 19. The methodof claim 15, wherein forming the conductive contact in the trenchcomprises forming a conductive contact extending over a top surface ofthe insulating layer.
 20. The method of claim 15, wherein exposing theconductive contact from the closed end of the trench in the insulatinglayer comprises a dry etch operation.